Datasheet NDT454P - Fairchild MOSFET, P, SMD, SOT-223 — Datenblatt

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Manufacturer: Fairchild

Description: MOSFET, P, SMD, SOT-223

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Docket:
June 1996
NDT454P P-Channel Enhancement Mode Field Effect Transistor
General Description
Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features

Specifications:

• Continuous Drain Current Id: -5.9 A
• Current Id Max: -5.9 A
• Drain Source Voltage Vds: -30 V
• Mounting Type: SMD
• Number of Pins: 4
• On Resistance Rds(on): 50 MOhm
• Package / Case: SOT-223
• Power Dissipation: 3 W
• Rds(on) Test Voltage Vgs: -10 V
• SVHC: No SVHC (19-Dec-2011)
• Threshold Voltage Vgs Typ: -2.7 V
• Transistor Case Style: SOT-223
• Transistor Polarity: P Channel
• Voltage Vds Typ: -30 V
• Voltage Vgs Max: -2.7 V
• Voltage Vgs Rds on Measurement: -10 V

RoHS: Y-Ex