Datasheet NDT3055L - Fairchild MOSFET, N, SOT-223 — Datenblatt

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Manufacturer: Fairchild

Description: MOSFET, N, SOT-223

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Docket:
August 1998
NDT3055L N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.
Features

Specifications:

• Continuous Drain Current Id: 3.5 A
• Current Id Max: 4 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 60 V
• External Depth: 7.3 mm
• External Length / Height: 1.7 mm
• External Width: 6.7 mm
• Full Power Rating Temperature: 25°C
• Mounting Type: SMD
• Number of Pins: 4
• Number of Transistors: 1
• On Resistance Rds(on): 100 MOhm
• Package / Case: SOT-223
• Power Dissipation Pd: 3 W
• Pulse Current Idm: 25 A
• Rds(on) Test Voltage Vgs: 10 V
• SMD Marking: 3055L
• SVHC: No SVHC (15-Dec-2010)
• Tape Width: 12 mm
• Threshold Voltage Vgs Typ: 1.6 V
• Transistor Case Style: SOT-223
• Transistor Polarity: N Channel
• Voltage Vds Typ: 60 V
• Voltage Vgs Max: 1.6 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 2 V

RoHS: Y-Ex