Datasheet FDS8880 - Fairchild MOSFET, N CH, 30 V, 11.6 A, 8SOIC — Datenblatt

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Manufacturer: Fairchild

Description: MOSFET, N CH, 30 V, 11.6 A, 8SOIC

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Docket:
FDS8880 N-Channel PowerTrench® MOSFET
April 2007
FDS8880 N-Channel PowerTrench® MOSFET
30V, 11.6A, 10m Features
rDS(on) = 10m, VGS = 10V, ID = 11.6A rDS(on) = 12m, VGS = 4.5V, ID = 10.7A High performance trench technology for extremely low rDS(on) Low gate charge High power and current handling capability RoHS Compliant

Specifications:

• Continuous Drain Current Id: 11.6 A
• Current Id Max: 11.6 A
• Drain Source Voltage Vds: 30 V
• Mounting Type: SMD
• Number of Pins: 8
• On Resistance Rds(on): 10 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOIC
• Power Dissipation: 2.5 W
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (19-Dec-2011)
• Threshold Voltage Vgs Typ: 2.5 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vds Typ: 30 V
• Voltage Vgs Max: 2.5 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes