Datasheet FDG6320C - Fairchild MOSFET, DUAL, NP, SMD, 6-SC-70 — Datenblatt

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Manufacturer: Fairchild

Description: MOSFET, DUAL, NP, SMD, 6-SC-70

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Docket:
November 1998
FDG6320C Dual N & P Channel Digital FET
General Description
These dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.
Features

Specifications:

• Continuous Drain Current Id: 220 mA
• Current Id Max: 220 mA
• Drain Source Voltage Vds: 25 V
• Mounting Type: SMD
• Number of Pins: 6
• On Resistance Rds(on): 4 Ohm
• Package / Case: SC-70
• Power Dissipation: 300 mW
• Rds(on) Test Voltage Vgs: 4.5 V
• SVHC: No SVHC (19-Dec-2011)
• Threshold Voltage Vgs Typ: 850 mV
• Transistor Case Style: SC-70
• Transistor Polarity: N and P Channel
• Voltage Vds Typ: 25 V
• Voltage Vgs Max: 850 mV
• Voltage Vgs Rds on Measurement: 4.5 V

RoHS: Yes