Datasheet FDC6302P - Fairchild MOSFET P CH DUAL 25 V 0.12 A SSOT6 — Datenblatt

Fairchild FDC6302P

Part Number: FDC6302P

Detaillierte Beschreibung

Manufacturer: Fairchild

Description: MOSFET P CH DUAL 25 V 0.12 A SSOT6

Docket:
October 1997
FDC6302P Digital FET, Dual P-Channel
General Description
These Dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switchimg applications. Since bias resistors are not required this one P-Channel FET can replace several digital transistors with different bias resistors like the IMBxA series.
Features

Specifications:

Continuous Drain Current Id: -200 mA
Current Id Max: -120 mA
Drain Source Voltage Vds: -25 V
Mounting Type: SMD
Number of Pins: 6
On Resistance Rds(on): 10 Ohm
Operating Temperature Range: -55°C to +150°C
Package / Case: SSOT
Power Dissipation: 900 mW
Rds(on) Test Voltage Vgs: -4.5 V
SVHC: No SVHC (19-Dec-2011)
Threshold Voltage Vgs Typ: -1 V
Transistor Case Style: SSOT
Transistor Polarity: P Channel
Voltage Vds Typ: -25 V
Voltage Vgs Max: -1 V
Voltage Vgs Rds on Measurement: -4.5 V

RoHS: Yes