Datasheet FDC6301N - Fairchild MOSFET, NN CH, 25 V, 0.22 A, SSOT6 — Datenblatt

Fairchild FDC6301N

Part Number: FDC6301N

Detaillierte Beschreibung

Manufacturer: Fairchild

Description: MOSFET, NN CH, 25 V, 0.22 A, SSOT6

Docket:
September 2001
FDC6301N Dual N-Channel , Digital FET
General Description
These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild 's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, these N-Channel FET's can replace several digital transistors, with a variety of bias resistors.
Features

Specifications:

Continuous Drain Current Id: 220 mA
Current Id Max: 220 mA
Drain Source Voltage Vds: 25 V
Mounting Type: SMD
Number of Pins: 6
On Resistance Rds(on): 5 Ohm
Operating Temperature Range: -55°C to +150°C
Package / Case: SSOT
Power Dissipation: 900 mW
Rds(on) Test Voltage Vgs: 4.5 V
SVHC: No SVHC (19-Dec-2011)
Threshold Voltage Vgs Typ: 850 mV
Transistor Case Style: SSOT
Transistor Polarity: N Channel
Voltage Vds Typ: 25 V
Voltage Vgs Max: 850 mV
Voltage Vgs Rds on Measurement: 2.7 V

RoHS: Yes