Datasheet 2N7000_D26Z - Fairchild MOSFET, N, TO-92 — Datenblatt

Fairchild 2N7000_D26Z

Part Number: 2N7000_D26Z

Detaillierte Beschreibung

Manufacturer: Fairchild

Description: MOSFET, N, TO-92

Docket:
November 1995
2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features

Specifications:

Continuous Drain Current Id: 200 mA
Current Id Max: 200 mA
Drain Source Voltage Vds: 60 V
Mounting Type: Through Hole
Number of Pins: 3
On Resistance Rds(on): 5 Ohm
Package / Case: TO-92
Power Dissipation Pd: 400 mW
Rds(on) Test Voltage Vgs: 10 V
SVHC: No SVHC (15-Dec-2010)
Threshold Voltage Vgs Typ: 2.1 V
Transistor Case Style: TO-92
Transistor Polarity: N Channel
Voltage Vds Typ: 60 V
Voltage Vgs Max: 3 V
Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

STMicroelectronics - 2N7000