Datasheet ATF-501P8-BLK - Avago Technologies TRANSISTOR, GAAS, HI-LIN — Datenblatt

Detaillierte Beschreibung

Manufacturer: Avago Technologies

Description: TRANSISTOR, GAAS, HI-LIN

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Docket:
ATF-501P8
High Linearity Enhancement Mode[1] Pseudomorphic HEMT in 2x2 mm2 LPCC[3] Package
Data Sheet
Description
Avago Technologies's ATF-501P8 is a single-voltage high linearity, low noise E-pHEMT housed in an 8-lead JEDECstandard leadless plastic chip carrier (LPCC[3]) package.

The device is ideal as a medium-power amplifier. Its operating frequency range is from 400 MHz to 3.9 GHz. The thermally efficient package measures only 2mm x 2mm x 0.75mm. Its backside metalization provides excellent thermal dissipation as well as visual evidence of solder reflow. The device has a Point MTTF of over 300 years at a mounting temperature of +85єC. All devices are 100% RF & DC tested.

Specifications:

• Cont Current Id @ 25В°C: 1 A
• Continuous Drain Current Id: 1 A
• Current Id Max: 1 A
• Drain Source Voltage Vds: 7 V
• Gain Bandwidth ft Min: 400 MHz
• Gain Bandwidth ft Typ: 2 GHz
• Mounting Type: SMD
• Number of Pins: 8
• Number of Transistors: 1
• Package / Case: LPCC
• Pin Configuration: S(1), G(2), D(7), N/C(3+5+6+8)
• Power Dissipation Pd: 3.5 W
• SMD Marking: 0Px
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 330 mV
• Transistor Case Style: LPCC
• Voltage Vds Typ: 4.5 V
• Voltage Vgs Max: 800 mV

RoHS: Yes

Andere Namen:

ATF501P8BLK, ATF 501P8 BLK