Datasheet ZXMN2F34MATA - Diodes MOSFET, N, DFN322 — Datenblatt

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Manufacturer: Diodes

Description: MOSFET, N, DFN322

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Docket:
ZXMN2F34MA 20V N-channel enhancement mode MOSFET in DFN322
Summary
V(BR)DSS 20 RDS(on) () 0.060 @ VGS= 4.5V 0.120 @ VGS= 2.5V ID (A) 5.1 3.6
Description
This new generation Trench MOSFET from Zetex features low onresistance achievable with low (2.5V) gate drive.

The 2mm x 2mm DFN package provides superior thermal performance versus alternative leaded devices

Simulation Model

Specifications:

• Continuous Drain Current Id: 5.1 A
• Current Id Max: 5.1 A
• Drain Source Voltage Vds: 20 V
• Mounting Type: SMD
• Number of Pins: 3
• On Resistance Rds(on): 60 MOhm
• On State Resistance @ Vgs = 2.5V: 120 MOhm
• On State Resistance @ Vgs = 4.5V: 60 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: DFN322
• Power Dissipation Pd: 1.35 W
• Rds(on) Test Voltage Vgs: 4.5 V
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: DFN
• Transistor Polarity: N Channel
• Voltage Vds Typ: 20 V
• Voltage Vgs Max: 12 V
• Voltage Vgs Rds on Measurement: 4.5 V
• Voltage Vgs th Min: 500 mV

RoHS: Yes