Datasheet ZXMN10A08E6 - Diodes MOSFET, N, SOT-23-6 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Diodes

Description: MOSFET, N, SOT-23-6

Simulation Model

Specifications:

• Continuous Drain Current Id: 1.5 A
• Current Id Max: 1.9 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 100 V
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Mounting Type: SMD
• Number of Pins: 6
• Number of Transistors: 1
• On Resistance Rds(on): 400 MOhm
• On State Resistance Max: 400 MOhm
• Package / Case: SOT-23
• Power Dissipation Pd: 1.1 W
• Pulse Current Idm: 5.3 A
• Rds(on) Test Voltage Vgs: 10 V
• SMD Marking: 10A8
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 2 V
• Transistor Case Style: SOT-23
• Transistor Polarity: N Channel
• Voltage Vds Typ: 100 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Min: 2 V

RoHS: Yes