Datasheet ZXMN0545G4 - Diodes MOSFET, N, SOT-223 — Datenblatt

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Manufacturer: Diodes

Description: MOSFET, N, SOT-223

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Docket:
ZXMN0545G4
450V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS = 450V; RDS(ON) = 50 ; ID = 140mA
DESCRIPTION This 450V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown.

Applications benefiting from this device include a variety of Telecom and general high voltage circuits. FEATURES
· High voltage · Low on-resistance · Fast switching speed · Low gate drive · Low threshold · SOT223 package variant engineered to increase spacing between

Specifications:

• Application Code: HVGP
• Continuous Drain Current Id: 140 mA
• Current Id Max: 140 mA
• Current Temperature: 25°C
• Drain Source Voltage Vds: 450 V
• External Depth: 7.3 mm
• External Length / Height: 1.7 mm
• External Width: 6.7 mm
• Full Power Rating Temperature: 25°C
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• On Resistance Rds(on): 50 Ohm
• Operating Temperature Range: -80°C to +150°C
• Package / Case: SOT-223
• Power Dissipation Pd: 2 W
• Pulse Current Idm: 600 mA
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (15-Dec-2010)
• Tape Width: 12 mm
• Threshold Voltage Vgs Typ: 3 V
• Transistor Case Style: SOT-223
• Transistor Polarity: N Channel
• Voltage Vds Typ: 450 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 3 V

RoHS: Yes