Datasheet DMS3015SSS-13 - Diodes MOSFET, +SCH, N CH, 30 V, 11 A, SO8 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Diodes

Description: MOSFET, +SCH, N CH, 30 V, 11 A, SO8

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Docket:
DMS3015SSS
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
Features
· DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: · Low RDS(ON) - minimizes conduction losses · Low VSD - reducing the losses due to body diode conduction · Low Qrr - lower Qrr of the integrated Schottky reduces body diode switching losses · Low gate capacitance (Qg/Qgs) ratio ­ reduces risk of shootthrough or cross conduction currents at high frequencies · Avalanche rugged ­ IAR and EAR rated Lead Free, RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data

Specifications:

• Continuous Drain Current Id: 11 A
• Current Id Max: 11 A
• Drain Source Voltage Vds: 30 V
• Number of Pins: 8
• On Resistance Rds(on): 8.5 MOhm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 1.55 W
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (20-Jun-2011)
• Threshold Voltage Vgs Typ: 1.5 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vgs Max: 20 V

RoHS: Yes

Andere Namen:

DMS3015SSS13, DMS3015SSS 13