TIP142T
TIP147T
Complementary power Darlington transistors
Features
в– Monolithic Darlington configuration в– Integrated antiparallel collector-emitter diode TAB Application
в– Linear and switching industrial equipment 3
1 Description TO-220 The devices are manufactured in planar
technology with “base island” layout and
monolithic Darlington configuration. The resulting
transistors show exceptional high gain
performance coupled with very low saturation
voltage. Table 1. Figure 1. Internal schematic diagrams R1 typ. = 5 kО© R1 typ. = 8 kО© R2 typ. = 60 О© R2 typ. = 100 О© Device summary Part number Marking Polarity TIP142T TIP142T NPN TIP147T TIP147T PNP May 2010 2 Doc ID 4135 Rev 5 Package Packaging TO-220 Tube 1/8
www.st.com 8 Absolute maximum ratings 1 Absolute maximum ratings
Table 2. Absolute maximum ratings Symbol Value Unit Collector-base voltage (IE = 0) 100 V VCEO Collector-emitter voltage (IB = 0) 100 V VEBO Emitter-base voltage (IC = 0) 5 V Collector current 10 A Collector peak current 20 A Base current 0.5 A PTOT Total dissipation at Tcase = 25 В°C 90 W TSTG Storage temperature -65 to 150 В°C 150 В°C ICM
IB TJ Max. operating junction temperature For PNP type voltage and current are negative.
Table 3.
Symbol
RthJC 2/8 Parameter VCBO IC Note: TIP142T, TIP147T Thermal data
Parameter
Thermal resistance junction-case Doc ID 4135 Rev 5 __max Value Unit 1.4 В°C/W TIP142T, TIP147T 2 Electrical characteristics Electrical characteristics
Tcase = 25 В°C; unless otherwise specified.
Table 4.
Symbol Electrical characteristics …