Datasheet NJT4030PT1G - ON Semiconductor BIPOLAR TRANSISTOR, PNP, -40 V, SOT-223 — Datenblatt

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Manufacturer: ON Semiconductor

Description: BIPOLAR TRANSISTOR, PNP, -40 V, SOT-223

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Docket:
NJT4030P Bipolar Power Transistors
PNP Silicon
Features
Collector --Emitter Sustaining Voltage -
VCEO(sus) = 40 Vdc (Min) @ IC = 10 mAdc High DC Current Gain = 200 (Min) @ IC = 1.0 Adc hFE = 100 (Min) @ IC = 3.0 Adc Low Collector -Emitter Saturation Voltage VCE(sat) = 0.200 Vdc (Max) @ IC = 1.0 Adc = 0.500 Vdc (Max) @ IC = 3.0 Adc SOT-223 Surface Mount Packaging Epoxy Meets UL 94, V- @ 0.125 in -0 ESD Ratings: Human Body Model, 3B; > 8000 V Machine Model, C; > 400 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 40 V
• DC Collector Current: 3 A
• DC Current Gain Max (hfe): 100
• Power Dissipation Pd: 2 W
• Transistor Polarity: P Channel
• Transition Frequency Typ ft: 160 MHz

RoHS: Yes

Accessories:

• WAKEFIELD SOLUTIONS - 217-36CTRE6