Datasheet MJD5731T4G - ON Semiconductor BIPOLAR TRANSISTOR, PNP, -350 V — Datenblatt

Detaillierte Beschreibung

Manufacturer: ON Semiconductor

Description: BIPOLAR TRANSISTOR, PNP, -350 V

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Docket:
MJD5731 High Voltage PNP Silicon Power Transistors
D e s i g n e d f o r l i n e o p e r a t e d a u d i o o u t p u t a m p l i f i e r, SWITCHMODE t power supply drivers and other switching applications.
Features http://onsemi.com
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350 V (Min) - VCEO(sus) 1.0 A Rated Collector Current PNP Complements to the MJD47 thru MJD50 Series Epoxy Meets UL 94 V-0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V These are Pb-Free Packages

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 350 V
• DC Collector Current: 1 A
• DC Current Gain Max (hfe): 10
• Power Dissipation Pd: 15 mW
• Transistor Polarity: PNP
• Transition Frequency Typ ft: 10 Hz

RoHS: Yes