Datasheet MJD350T4G - ON Semiconductor BIPOLAR TRANSISTOR, PNP, -300 V — Datenblatt

Detaillierte Beschreibung

Manufacturer: ON Semiconductor

Description: BIPOLAR TRANSISTOR, PNP, -300 V

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 300 V
• DC Collector Current: 500 mA
• DC Current Gain Max (hfe): 240
• Operating Temperature Range: -65°C to +150°C
• Power Dissipation Pd: 15 W
• Transistor Polarity: P Channel

RoHS: Yes