Datasheet MJD253-1G - ON Semiconductor POWER TRANSISTOR, PNP, -100 V, D-PAK — Datenblatt

ON Semiconductor MJD253-1G

Part Number: MJD253-1G

Detaillierte Beschreibung

Manufacturer: ON Semiconductor

Description: POWER TRANSISTOR, PNP, -100 V, D-PAK

Simulation ModelSimulation Model

Specifications:

  • Collector Emitter Voltage V(br)ceo: 100 V
  • DC Collector Current: -4 A
  • DC Current Gain Max (hfe): 40
  • Power Dissipation Pd: 12.5 W
  • Transistor Polarity: PNP
  • Transition Frequency Typ ft: 40 MHz

RoHS: Yes

Andere Namen:

MJD2531G, MJD253 1G