Datasheet MJD253-1G - ON Semiconductor POWER TRANSISTOR, PNP, -100 V, D-PAK — Datenblatt
Part Number: MJD253-1G
Detaillierte Beschreibung
Manufacturer: ON Semiconductor
Description: POWER TRANSISTOR, PNP, -100 V, D-PAK
Specifications:
- Collector Emitter Voltage V(br)ceo: 100 V
- DC Collector Current: -4 A
- DC Current Gain Max (hfe): 40
- Power Dissipation Pd: 12.5 W
- Transistor Polarity: PNP
- Transition Frequency Typ ft: 40 MHz
RoHS: Yes
Andere Namen:
MJD2531G, MJD253 1G