Datasheet BC373G - ON Semiconductor DARLINGTON TRANSISTOR, TO-92 — Datenblatt
Part Number: BC373G
Detaillierte Beschreibung
Manufacturer: ON Semiconductor
Description: DARLINGTON TRANSISTOR, TO-92
Docket:
BC372, BC373 High Voltage Darlington Transistors
NPN Silicon
Features http://onsemi.com
COLLECTOR 3 BASE 2 Symbol VCEO BC372 BC373 Collector -Base Voltage BC372 BC373 Emitter-Base Voltage Collector Current - Continuous Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Operating and Storage Junction Temperature Range VEBO IC PD PD TJ, Tstg VCES 100 80 12 1.0 625 5.0 1.5 12 -55 to +150 Vdc Adc mW mW/°C W mW/°C °C BC37x = Device Code x = 2 or 3 A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) 12 3 TO-92 CASE 29 STYLE 1 BC 37x AYWW G G 100 80 Vdc Value Unit Vdc EMITTER 1
· Pb-Free Packages are Available*
Specifications:
- Av Current Ic: 1 A
- Collector Emitter Voltage V(br)ceo: 80 V
- Collector Emitter Voltage Vces: 1.1 V
- Continuous Collector Current Ic Max: 1 A
- Current Ic Continuous a Max: 1 A
- DC Collector Current: 1 A
- DC Current Gain Min: 10000
- DC Current Gain: 100 mA
- Device Marking: BC373
- Full Power Rating Temperature: 25°C
- Gain Bandwidth ft Min: 100 MHz
- Gain Bandwidth ft Typ: 200 MHz
- Hfe NPN Device @ IC Min: 0.1
- Mounting Type: Through Hole
- Number of Pins: 3
- Number of Transistors: 1
- Operating Temperature Range: -55°C to +150°C
- Package / Case: TO-92
- Pin Configuration: b
- Power Dissipation Pd: 625 mW
- Power Dissipation Ptot Max: 625 mW
- SVHC: No SVHC (15-Dec-2010)
- Transistor Case Style: TO-92
- Transistor Polarity: NPN
- Transistor Type: Darlington
- Voltage Vcbo: 80 V
- Voltage Vceo Max: 80 V
RoHS: Yes