Datasheet MJD112T4G - ON Semiconductor DARLINGTON TRANSISTOR, NPN, 100 V, D-PAK — Datenblatt
Part Number: MJD112T4G
Detaillierte Beschreibung
Manufacturer: ON Semiconductor
Description: DARLINGTON TRANSISTOR, NPN, 100 V, D-PAK
Specifications:
- Collector Emitter Voltage V(br)ceo: 100 V
- Operating Temperature Range: -65°C to +150°C
- Power Dissipation Pd: 20 W
- Transistor Polarity: NPN
- Transition Frequency Typ ft: 25 MHz
RoHS: Yes