Datasheet 2N6338G - ON Semiconductor BIPOLAR TRANSISTOR, NPN, 100 V, TO-3 — Datenblatt

ON Semiconductor 2N6338G

Part Number: 2N6338G

Detaillierte Beschreibung

Manufacturer: ON Semiconductor

Description: BIPOLAR TRANSISTOR, NPN, 100 V, TO-3

Docket:
ON Semiconductort
High-Power NPN Silicon Transistors
.

. . designed for use in industrial-military power amplifier and switching circuit applications. · High Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min) - 2N6338 = 150 Vdc (Min) - 2N6341 · High DC Current Gain - hFE = 30 - 120 @ IC = 10 Adc = 12 (Min) @ IC = 25 Adc · Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc · Fast Switching Times @ IC = 10 Adc tr = 0.3 ms (Max) ts = 1.0 ms (Max) tf = 0.25 ms (Max)
2N6338 2N6341*
*ON Semiconductor Preferred Device

Simulation Model

Specifications:

Collector Emitter Voltage V(br)ceo: 100 V
DC Collector Current: 25 A
DC Current Gain Max (hfe): 40
Power Dissipation Pd: 200 W
Transistor Polarity: N Channel
Transition Frequency Typ ft: 40 MHz

RoHS: Yes