Datasheet 2N5886G - ON Semiconductor TRANSISTOR, NPN, TO-3 — Datenblatt

Detaillierte Beschreibung

Manufacturer: ON Semiconductor

Description: TRANSISTOR, NPN, TO-3

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Docket:
2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)
2N5884 and 2N5886 are Preferred Devices
Complementary Silicon High-Power Transistors
Complementary silicon high-power transistors are designed for general-purpose power amplifier and switching applications.
Features http://onsemi.com

Simulation Model

Specifications:

• Av Current Ic: 25 A
• Collector Emitter Voltage V(br)ceo: 80 V
• Collector Emitter Voltage Vces: 1 V
• Continuous Collector Current Ic Max: 25 A
• Current Ic Continuous a Max: 25 A
• DC Collector Current: 25 A
• DC Current Gain Min: 20
• DC Current Gain: 10 A
• Device Marking: 2N5886G
• Full Power Rating Temperature: 25°C
• Gain Bandwidth ft Min: 4 MHz
• Gain Bandwidth ft Typ: 4 MHz
• Mounting Type: Through Hole
• Number of Pins: 2
• Number of Transistors: 1
• Package / Case: TO-3
• Power Dissipation Pd: 200 W
• Power Dissipation Ptot Max: 200 W
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: TO-3
• Transistor Polarity: NPN
• Voltage Vcbo: 80 V

RoHS: Yes

Accessories:

• Fischer Elektronik - AKK 191
• Fischer Elektronik - FK 201SA-3
• Fischer Elektronik - SK 04/50 SA
• Fischer Elektronik - WLK 5