Datasheet PBSS8510PA - NXP TRANSISTOR, NPN, 100 V, 5.2 A, SOT1061 — Datenblatt

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Manufacturer: NXP

Description: TRANSISTOR, NPN, 100 V, 5.2 A, SOT1061

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Docket:
PBSS8510PA
100 V, 5.2 A NPN low VCEsat (BISS) transistor
Rev.

1 -- 17 May 2010 Product data sheet
1. Product profile
1.1 General description

Specifications:

• Collector Emitter Voltage V(br)ceo: -100 V
• DC Collector Current: -5.2 A
• DC Current Gain: 285
• Gain Bandwidth ft Typ: 150 MHz
• Number of Pins: 3
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 2.1 W
• Transistor Case Style: SOT-1061
• Transistor Polarity: NPN
• Transition Frequency Typ ft: 150 MHz
• RoHS: Yes
• SVHC: No SVHC (19-Dec-2011)