Datasheet PBSS5580PA - NXP TRANSISTOR, PNP, 80 V, 4 A, SOT1061 — Datenblatt

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Manufacturer: NXP

Description: TRANSISTOR, PNP, 80 V, 4 A, SOT1061

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Docket:
PBSS5580PA
80 V, 4 A PNP low VCEsat (BISS) transistor
Rev.

01 -- 6 May 2010 Product data sheet
1. Product profile
1.1 General description

Specifications:

• Collector Emitter Voltage V(br)ceo: -80 V
• DC Collector Current: -4 A
• DC Current Gain: 265
• Gain Bandwidth ft Typ: 110 MHz
• Number of Pins: 3
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 2.1 W
• Transistor Case Style: SOT-1061
• Transistor Polarity: PNP
• Transition Frequency Typ ft: 110 MHz
• RoHS: Yes
• SVHC: No SVHC (19-Dec-2011)