Datasheet BCW30 - NXP TRANSISTOR, PNP, SOT-23 — Datenblatt

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Manufacturer: NXP

Description: TRANSISTOR, PNP, SOT-23

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Docket:
DISCRETE SEMICONDUCTORS
DATA SHEET
BCW29; BCW30 PNP general purpose transistors
Product data sheet Supersedes data of 1999 Apr 13 2004 Jan 13
NXP Semiconductors

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 32 V
• Collector Emitter Voltage Vces: -300 mV
• Continuous Collector Current Ic Max: 100 mA
• Current Ic Continuous a Max: 100 mA
• DC Collector Current: 100 mA
• DC Current Gain Min: 215
• DC Current Gain: 10 mA
• Device Marking: BCW30
• Gain Bandwidth ft Min: 100 MHz
• Gain Bandwidth ft Typ: 100 MHz
• Mounting Type: SMD
• Noise Factor Max: 10 dB
• Number of Pins: 3
• Number of Transistors: 1
• Operating Temperature Range: -65°C to +150°C
• Package / Case: SOT-23
• Power Dissipation Pd: 250 mW
• Power Dissipation Ptot Max: 250 mW
• SMD Marking: C2
• SVHC: No SVHC (18-Jun-2010)
• Transistor Case Style: SOT-23
• Transistor Polarity: PNP
• Voltage Vcbo: 32 V

RoHS: Yes

Accessories:

• Electrolube - SMA10SL
• LICEFA - V11-7
• Roth Elektronik - RE901