Datasheet PMBT5551,215 - NXP BIPOLAR TRANSISTOR, HIGH VOLTAGE, NPN, 160 V, 300 mA, 3-SOT-23 — Datenblatt

Detaillierte Beschreibung

Manufacturer: NXP

Description: BIPOLAR TRANSISTOR, HIGH VOLTAGE, NPN, 160 V, 300 mA, 3-SOT-23

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DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
PMBT5551 NPN high-voltage transistor

Specifications:

• Collector Emitter Voltage V(br)ceo: 160 V
• DC Collector Current: 300 mA
• Power Dissipation Pd: 250 mW
• Transistor Polarity: NPN
• Transition Frequency Typ ft: 300 MHz

RoHS: Yes

Andere Namen:

PMBT5551215, PMBT5551 215