Datasheet PBSS4160T,215 - NXP BISS TRANSISTOR, NPN, 60 V, 1 A, 3-SOT-23 — Datenblatt

Detaillierte Beschreibung

Manufacturer: NXP

Description: BISS TRANSISTOR, NPN, 60 V, 1 A, 3-SOT-23

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DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
PBSS4160T 60 V, 1 A NPN low VCEsat (BISS) transistor

Specifications:

• Collector Emitter Voltage V(br)ceo: 60 V
• DC Collector Current: 1 A
• DC Current Gain Max (hfe): 400
• Power Dissipation Pd: 270 mW
• Transistor Polarity: NPN
• Transition Frequency Typ ft: 220 MHz

RoHS: Yes

Andere Namen:

PBSS4160T215, PBSS4160T 215