Datasheet BST39,115 - NXP TRANSISTOR NPN 350 V 0.1 A SOT-89 — Datenblatt

Detaillierte Beschreibung

Manufacturer: NXP

Description: TRANSISTOR NPN 350 V 0.1 A SOT-89

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Docket:
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D109
BST39; BST40 NPN high-voltage transistors

Specifications:

• Collector Emitter Voltage V(br)ceo: 350 V
• Collector Emitter Voltage Vces: 500 mV
• Current Ic Continuous a Max: 50 mA
• DC Collector Current: 100 mA
• DC Current Gain Min: 40
• DC Current Gain: 40
• Gain Bandwidth ft Typ: 70 MHz
• Mounting Type: SMD
• Number of Pins: 3
• Operating Temperature Range: -65°C to +150°C
• Package / Case: SOT-89
• Power Dissipation Pd: 1.3 W
• SVHC: No SVHC (18-Jun-2010)
• Transistor Case Style: SOT-89
• Transistor Polarity: NPN
• Transistor Type: Power Bipolar

RoHS: Yes

Andere Namen:

BST39115, BST39 115