Datasheet BCX55-10,115 - NXP TRANSISTOR NPN 60 V 1 A SOT89 — Datenblatt

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Manufacturer: NXP

Description: TRANSISTOR NPN 60 V 1 A SOT89

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Docket:
BC637; BCP55; BCX55
60 V, 1 A NPN medium power transistors
Rev.

07 -- 25 June 2007 Product data sheet
1. Product profile
1.1 General description

Specifications:

• Collector Emitter Voltage V(br)ceo: 60 V
• Collector Emitter Voltage Vces: 500 mV
• Current Ic Continuous a Max: 500 mA
• DC Collector Current: 1 A
• DC Current Gain Min: 63
• DC Current Gain: 63
• Gain Bandwidth ft Typ: 180 MHz
• Mounting Type: SMD
• Number of Pins: 3
• Operating Temperature Range: -65°C to +150°C
• Package / Case: SOT-89
• Power Dissipation: 500 mW
• SVHC: No SVHC (19-Dec-2011)
• Transistor Case Style: SOT-89
• Transistor Polarity: NPN
• Transistor Type: Power Bipolar
• Transition Frequency Typ ft: 180 MHz

RoHS: Yes

Andere Namen:

BCX5510,115, BCX55 10,115, BCX55-10115, BCX55-10 115