Datasheet NTE390 - NTE Electronics BIPOLAR TRANSISTOR, NPN, 100 V, TO-218 — Datenblatt

Detaillierte Beschreibung

Manufacturer: NTE Electronics

Description: BIPOLAR TRANSISTOR, NPN, 100 V, TO-218

Download Data Sheet

Docket:
NTE390 (NPN) & NTE391 (PNP) Silicon Complementary Transistors General Purpose
Description: The NTE390 (NPN) and NTE391 (PNP) are silicon compelementary transistors in a TO218 type package designed for general purpose power amplifier and switching applications.

Features: D 10A Collector Current D Low Leakage Current: ICEO = 0.7mA @ VCE = 60V D Excellent DC Gain: hFE = 40 Typ @ 3A D High Current Gain Bandwidth Product: hfe = 3 Min @ IC = 500mA, f = 1MHz Absolute Maximum Ratings: Collector­Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector­Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter­Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . .

Specifications:

• Collector Emitter Voltage V(br)ceo: 100 V
• DC Collector Current: 10 A
• DC Current Gain Max (hfe): 40
• Power Dissipation Pd: 80 W
• Transistor Polarity: N Channel
• Transition Frequency Typ ft: 3 MHz

RoHS: Yes

Accessories:

• WAKEFIELD SOLUTIONS - 273-AB