Datasheet NTE324 - NTE Electronics BIPOLAR TRANSISTOR, NPN, 120 V TO-39 — Datenblatt

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Manufacturer: NTE Electronics

Description: BIPOLAR TRANSISTOR, NPN, 120 V TO-39

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Docket:
NTE323 (PNP) & NTE324 (NPN) Silicon Complementary Transistors General Purpose
Description: The NTE323 (PNP) and NTE324 (NPN) are complementary silicon epitaxial planer transistors in a TO39 type package designed for use as drivers for high power transistors in general purpose amplifier and switching circuits.

Absolute Maximum Ratings: Collector­Base Voltage (IE = 0), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Collector­Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Emitter­Base Voltage (IC = 0), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Specifications:

• Collector Emitter Voltage V(br)ceo: 4 V
• DC Collector Current: 1 A
• DC Current Gain Max (hfe): 40
• Power Dissipation Pd: 10 W
• Transistor Polarity: NPN
• Transition Frequency Typ ft: 30 MHz

RoHS: Yes