Datasheet NTE254 - NTE Electronics DARLINGTON TRANSISTOR, PNP, -80 V, TO-126 — Datenblatt

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Manufacturer: NTE Electronics

Description: DARLINGTON TRANSISTOR, PNP, -80 V, TO-126

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Docket:
NTE253 (NPN) & NTE254 (PNP) Silicon Complementary Transistors Darlington Power Amplifier
Description: The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for general­purpose amplifier and low­speed switching applications.

Features: D High DC Current Gain: hFE = 2000 (Typ) @ IC = 2A D Monolithic Construction with Built­In Base­Emitter Resistors to Limit Leakage Multiplication Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector­Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector­Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter­Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . .

Specifications:

• Collector Emitter Voltage V(br)ceo: -80 V
• DC Collector Current: 16 A
• DC Current Gain Max (hfe): 2000
• Power Dissipation Pd: 150 W
• Transistor Polarity: PNP

RoHS: Yes