Datasheet NTE Electronics NTE129 — Datenblatt

NTE128 (NPN) & NTE129 (PNP)
Silicon Complementary Transistors
Audio Output, Video, Driver
Description:
The NTE128 (NPN) and NTE129 (PNP) are silicon complementary transistors in a TO39 type package designed primarily for amplifier and switching applications. These devices features high breakdown voltages, low leakage currents, low capacity, and a beta useful over an extremely wide current
range.
Absolute Maximum Ratings:
Collector-Emitter Voltage, VCEO 80V
Collector-Base Voltage, VCBO
NTE128 140V
NTE129 . 80V
Emitter-Base Voltage, VEBO
NTE128 7V
NTE129 5V
Continuous Collector Current, IC 1A
Total Device Dissipation (TA = +25°C), PD
NTE128 0.8W
Derate Above 25°C 4.6mW/°C
NTE129 . 1.25W
Derate Above 25°C . 7.15mW/°C
Total Device Dissipation (TC = +25°C), PD
NTE128 . 5W
Derate Above 25°C . 28.6mW/°C …