Datasheet NTE126 - NTE Electronics BIPOLAR TRANSISTOR, PNP, -15 V TO-18 — Datenblatt

Detaillierte Beschreibung

Manufacturer: NTE Electronics

Description: BIPOLAR TRANSISTOR, PNP, -15 V TO-18

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Docket:
NTE126
Germanium Mesa Transistor, PNP, for High­Speed Switching Applications
Maximum Ratings: Collector­Emitter Voltage, VCE .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15Vdc Collector­Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15Vdc Emitter­Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5Vdc Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0mW/°C Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Specifications:

• Collector Emitter Voltage V(br)ceo: -15 V
• DC Collector Current: 1 A
• DC Current Gain Max (hfe): 200
• Power Dissipation Pd: 20 W
• Transistor Polarity: PNP
• Transition Frequency Typ ft: 300 MHz