Datasheet NTE Electronics NTE102 — Datenblatt

NTE102 (PNP) & NTE103 (NPN)
Germanium Complementary Transistors
Power Output, Driver
TO−5 / TO−39 Type Package
Description:
The NTE102 (PNP) and NTE103 (NPN) are Germanium complementary transistors designed for medium−speed saturated switching applications.
Features:
D Low Collector−Emitter Saturation Voltage:
VCE(sat) = 200mV Max @ IC = 24mA
D High Emitter−Base Breakdown Voltage:
V(BR)EBO = 12V Min @ IE = 20A
Absolute Maximum Ratings:
Collector−Base Voltage, VCBO . 25V
Collector−Emitter Voltage, VCES 24V
Emitter−Base Voltage, VEBO . 12V
Continuous Collector Current, IC 150mA
Emitter Current, IE . 100mA
Total Device Dissipation (TA = +25C), PD . 150mW
Derate Above +25 . 2mW/C
Total Device Dissipation (TC = +25C), PD . 300mW
Derate Above +25 . 4mW/C
Operating Junction Temperature Range, TJ −65 to +100C
Storage Junction Temperature Range, Tstg −65 to +100C …