Datasheet 2N3055 - Multicomp TRANSISTOR, NPN, TO-3 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Multicomp

Description: TRANSISTOR, NPN, TO-3

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Docket:
Silicon Power Transistor
Features:
· · · · Power dissipation - PD = 115W at TC = 25°C.

DC current gain hFE = 20 ~ 70 at IC = 4.0A. VCE(Sat) = 1.1V (maximum) at IC = 4.0 A, IB = 400mA. Designed for use in general-purpose amplifier and switching applications.
Dimensions A B C D E F G H I J K
Minimum 38.75 19.28 7.96 11.18 25.20 0.92 1.38 29.90 16.64 3.88 10.67

Specifications:

• Av Current Ic: 15 A
• Collector Emitter Voltage V(br)ceo: 60 V
• Continuous Collector Current Ic Max: 15 A
• Current Ic Continuous a Max: 15 A
• DC Collector Current: 15 A
• DC Current Gain Min: 20
• DC Current Gain: 4 A
• Full Power Rating Temperature: 25°C
• Gain Bandwidth ft Min: 2.5 MHz
• Gain Bandwidth ft Typ: 2.5 MHz
• Mounting Type: Through Hole
• Number of Pins: 2
• Number of Transistors: 1
• Package / Case: TO-3
• Power Dissipation Pd: 115 W
• Power Dissipation Ptot Max: 115 W
• Transistor Case Style: TO-3
• Transistor Polarity: NPN
• Voltage Vcbo: 100 V

RoHS: Y-Ex

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