Datasheet ZXTP23140BFH - Diodes TRANSISTOR, PNP, SOT-23 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Diodes

Description: TRANSISTOR, PNP, SOT-23

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Docket:
ZXTP23140BFH 140V SOT23 PNP medium power transistor
Summary
V(BR)CEX > -160V, V(BR)CEO > -140V IC(CONT) = -2.5A RCE(sat) = 76m PD = 1.25W typical VCE(sat) < -95mV @ -1A
Description
Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor.

The compact size and ratings of this device make it ideally suited to applications where space is at a premium.

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 140 V
• Collector Emitter Voltage Vces: 55 mV
• Continuous Collector Current Ic Max: 2.5 A
• Current Gain Hfe Max: 300
• Current Ic Continuous a Max: 2.5 A
• Current Ic hFE: 1 A
• Current Ic hfe -Do Not Use See ID 1182: 1000 mA
• DC Current Gain Hfe Max: 300
• DC Current Gain Hfe Min: 100
• Gain Bandwidth ft Typ: 130 MHz
• Hfe Min: 100
• Mounting Type: SMD
• Package / Case: SOT-23
• Power Dissipation Pd: 1.25 W
• Power Dissipation Ptot Max: 1.25 W
• SMD Marking: 955
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: SOT-23
• Transistor Polarity: PNP
• Voltage Vcbo: 160 V

RoHS: Yes