Datasheet ZXTP2013GTA - Diodes TRANSISTOR, PNP, SOT-223 — Datenblatt

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Manufacturer: Diodes

Description: TRANSISTOR, PNP, SOT-223

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Docket:
ZXTP2013G
100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
SUMMARY BVCEO = -100V : RSAT = 60m ; IC = -5A DESCRIPTION
Packaged in the SOT223 outline this new low saturation 100V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.
FEATURES

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 115 V
• Collector Emitter Voltage Vces: 30 mV
• Current Ic Continuous a Max: 4 A
• Gain Bandwidth ft Typ: 125 MHz
• Hfe Min: 100
• Mounting Type: SMD
• Package / Case: SOT-223
• Power Dissipation: 1.6 W
• SVHC: No SVHC (18-Jun-2010)
• Transistor Case Style: SOT-223
• Transistor Polarity: PNP
• Transistor Type: Bipolar

RoHS: Yes