Datasheet ZXTN19060CFFTA - Diodes TRANSITOR, NPN, SOT-23F — Datenblatt
Part Number: ZXTN19060CFFTA
Detaillierte Beschreibung
Manufacturer: Diodes
Description: TRANSITOR, NPN, SOT-23F
Docket:
ZXTN19060CFF 60V, SOT23F, NPN high gain power transistor
Summary
BVCEX > 160V BVCEO > 60V BVECO > 6V IC(cont) = 5.5A VCE(sat) < 45mV @ 1A RCE(sat) = 26m PD = 1.5W Complementary part number ZXTP19060CFF
Description
This mid voltage NPN transistor has been designed for applications requiring high gain and low saturation voltage.
The SOT23F package is pin compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance.
Specifications:
- Collector-to-Emitter Breakdown Voltage: 60 V
- Current Ic @ Vce Sat: 5.5 A
- Current Ic hFE: 6 A
- DC Collector Current: 5.5 A
- DC Current Gain hFE: 350
- Max Current Ic Continuous a: 5.5 A
- Max Current Ic: 5.5 A
- Max Power Dissipation Ptot: 1.5 W
- Max Voltage Vce Sat: 0.175 V
- Min Gain Bandwidth ft: 130 MHz
- Min Hfe: 30
- Mounting Type: SMD
- Operating Temperature Range: -55°C to +150°C
- Package / Case: SOT-23F
- Peak Current Icm: 12 A
- Power Dissipation Pd: 1.5 W
- Power Dissipation: 1.5 W
- Transistor Case Style: SOT-23F
- Transistor Polarity: NPN
- Transistor Type: Bipolar
- Turn Off Time, t Off: 90.9 ns
- Turn On Time, t On: 13.2 ns
- Typ Gain Bandwidth ft: 130 MHz
- Voltage Vcbo: 160 V
RoHS: Yes