Datasheet ZTX688B - Diodes TRANSISTOR, NPN, E-LINE — Datenblatt

Detaillierte Beschreibung

Manufacturer: Diodes

Description: TRANSISTOR, NPN, E-LINE

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Docket:
NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
ISSUE 2 MAY 94 FEATURES * 12 Volt VCEO * Gain of 400 at IC=3 Amps * Very low saturation voltage APPLICATIONS * Darlington replacement * Flash gun convertors * Battery powered circuits * Motor drivers
ZTX688B
C B
E

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 12 V
• Collector Emitter Voltage Vces: 350 mV
• Continuous Collector Current Ic Max: 3 A
• Current Ic @ Vce Sat: 3 A
• Current Ic Continuous a Max: 3 A
• Current Ic hFE: 3 A
• DC Collector Current: 3 A
• DC Current Gain hFE: 500
• Full Power Rating Temperature: 25°C
• Gain Bandwidth ft Min: 150 MHz
• Gain Bandwidth ft Typ: 150 MHz
• Hfe Min: 400
• Mounting Type: Through Hole
• Number of Pins: 3
• Number of Transistors: 1
• Operating Temperature Range: -55°C to +200°C
• Package / Case: E-Line
• Power Dissipation Pd: 1 W
• Power Dissipation Ptot Max: 1 W
• Pulsed Current Icm: 10 A
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: E-Line
• Transistor Polarity: NPN
• Voltage Vcbo: 12 V

RoHS: Yes