Datasheet DMJT9435-13 - Diodes TRANSISTOR, PNP, SOT223, 1.2 W — Datenblatt

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Manufacturer: Diodes

Description: TRANSISTOR, PNP, SOT223, 1.2 W

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Docket:
DMJT9435
LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR
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Features
· · · · · Ideally Suited for Automated Assembly Processes Low Collector-Emitter Saturation Voltage Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2)

Specifications:

• Collector Emitter Voltage V(br)ceo: 30 V
• Collector Emitter Voltage Vces: 210 mV
• Current Ic Continuous a Max: 800 mA
• DC Collector Current: 800 mA
• DC Current Gain hFE: 125
• Gain Bandwidth ft Typ: 160 MHz
• Hfe Min: 125
• Mounting Type: SMD
• Number of Pins: 3
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-223
• Power Dissipation Pd: 1.2 W
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: SOT-223
• Transistor Polarity: PNP
• Transistor Type: Low Saturation (BISS)

RoHS: Yes

Andere Namen:

DMJT943513, DMJT9435 13