Datasheet ZXTN2010ZTA - Diodes TRANS, NPN, LO SAT, 60 V, 5 A, SOT89 — Datenblatt

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Manufacturer: Diodes

Description: TRANS, NPN, LO SAT, 60 V, 5 A, SOT89

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Docket:
ZXTN2010Z
60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION
Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.
FEATURES

Specifications:

• Collector Emitter Voltage V(br)ceo: 80 V
• DC Collector Current: 5 A
• DC Current Gain: 200
• Gain Bandwidth ft Typ: 130 MHz
• Number of Pins: 3
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 1.5 W
• Transistor Case Style: SOT-89
• Transistor Polarity: NPN
• Transition Frequency Typ ft: 130 MHz
• RoHS: Yes
• SVHC: No SVHC (18-Jun-2012)