Datasheet ZXT13N50DE6 - Diodes TRANSISTOR, NPN, SOT23-6 — Datenblatt

Diodes ZXT13N50DE6

Part Number: ZXT13N50DE6

Detaillierte Beschreibung

Manufacturer: Diodes

Description: TRANSISTOR, NPN, SOT23-6

Docket:
ZXT13N50DE6
SuperSOT4TM 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY VCEO=50V; RSAT = 36m ; IC= 4A
DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses.

This makes it ideal for high efficiency, low voltage switching applications. FEATURES · · · · · · · · · Extremely Low Equivalent On Resistance Extremely Low Saturation Voltage hFE characterised up to 10A IC=4A Continuous Collector Current SOT23-6 package
SOT23-6

Specifications:

Collector Emitter Voltage V(br)ceo: 50 V
Collector Emitter Voltage Vces: 12 mV
Continuous Collector Current Ic Max: 10 A
Current Ic @ Vce Sat: 100 mA
Current Ic Continuous a Max: 4 A
Current Ic Typ: 5 A
Current Ic hFE: 1 mA
DC Collector Current: 4 A
DC Current Gain hFE: 450
Device Marking: ZXT13N50DE6
Gain Bandwidth ft Typ: 115 MHz
Hfe Min: 300
Mounting Type: SMD
Number of Pins: 3
Operating Temperature Range: -55°C to +150°C
Package / Case: SOT-23
Power Dissipation Pd: 1.1 W
Power Dissipation Ptot Max: 1.1 W
SMD Marking: N50D
SVHC: No SVHC (15-Dec-2010)
Transistor Case Style: SOT-23
Transistor Polarity: NPN
Voltage Vcbo: 100 V

RoHS: Yes