Datasheet DSS4160V-7 - Diodes TRANSISTOR, NPN, SOT563, 0.6 W — Datenblatt

Detaillierte Beschreibung

Manufacturer: Diodes

Description: TRANSISTOR, NPN, SOT563, 0.6 W

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Docket:
DSS4160V
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
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Features
· · · · · · · Epitaxial Planar Die Construction Complementary PNP Type Available (DSS5160V) Low Collector-Emitter Saturation Voltage, VCE(SAT) Surface Mount Package Suited for Automated Assembly Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 1) "Green Device" (Note 2)

Specifications:

• Collector Emitter Voltage V(br)ceo: 60 V
• Collector Emitter Voltage Vces: 110 mV
• Current Ic Continuous a Max: 100 mA
• DC Collector Current: 100 mA
• DC Current Gain Min: 250
• DC Current Gain: 250
• Gain Bandwidth ft Typ: 150 MHz
• Mounting Type: SMD
• Number of Pins: 6
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-563
• Power Dissipation: 600 mW
• SVHC: No SVHC (20-Jun-2011)
• Transistor Case Style: SOT-563
• Transistor Polarity: NPN
• Transistor Type: Low Saturation (BISS)
• Transition Frequency Typ ft: 150 MHz

RoHS: Yes

Andere Namen:

DSS4160V7, DSS4160V 7