Datasheet Texas Instruments BUF08630RGWT — Datenblatt

BU BUF08630 F08 832 www.ti.com SBOS515A – OCTOBER 2010 – REVISED AUGUST 2012 Programmable Gamma-Voltage Generator and High Slew Rate VCOM
with Integrated Two-Bank Memory plus 1/2 AVDD Topology
Check for Samples: BUF08630 FEATURES DESCRIPTION The BUF08630 offers eight programmable gamma
channels and one programmable VCOM channel. 1 2 10-Bit Resolution
8-Channel P-Gamma
1-Channel P-VCOM
High Slew Rate VCOM: 45 V/Ојs
16x Rewritable Nonvolatile Memory
Two Independent Pin-Selectable Memory
Banks
Rail-to-Rail Output:
– 300 mV Min Swing-to-Rail (10 mA)
– > 300 mA Max IOUT
Low Supply Current
Supply Voltage: 9 V to 20 V
Digital Supply: 2 V to 5.5 V
Two-Wire Interface:
– Supports 400 kHz and 3.4 MHz
1/2 AVDD Capability APPLICATIONS TFT-LCD Reference Drivers
BKSEL VSD VCOM-FB VCOM-VS VCOM-OUT VCOM
DAC All gamma and VCOM channels offer a rail-to-rail
output that typically swings to within 150 mV of either
supply rail with a 10-mA load. All channels are …