Datasheet IKB03N120H2 - Infineon IGBT+ DIODE, 1200 V, 3 A, TO263 — Datenblatt

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Manufacturer: Infineon

Description: IGBT+ DIODE, 1200 V, 3 A, TO263

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Docket:
IKB03N120H2
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
C
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Designed for: - SMPS - Lamp Ballast - ZVS-Converter 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A Qualified according to JEDEC for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 1200V IC 3A Eoff 0.15mJ Tj 150°C Marking K03H1202 Package P-TO-220-3-45

Specifications:

• Collector Emitter Voltage V(br)ceo: 1.2 kV
• Collector Emitter Voltage Vces: 2.8 V
• DC Collector Current: 3 A
• Number of Pins: 3
• Operating Temperature Range: -40°C to +150°C
• Power Dissipation Max: 62.5 W
• Transistor Case Style: TO-220

RoHS: Yes

Accessories:

• KESTER SOLDER - 24-6040-0066