Datasheet LMC662CN - National Semiconductor IC, OP AMP, DUAL CMOS, DIP8, 662 — Datenblatt

National Semiconductor LMC662CN

Part Number: LMC662CN

Detaillierte Beschreibung

Manufacturer: National Semiconductor

Description: IC, OP AMP, DUAL CMOS, DIP8, 662

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Docket:
LMC662 CMOS Dual Operational Amplifier
April 2003
LMC662 CMOS Dual Operational Amplifier
General Description
The LMC662 CMOS Dual operational amplifier is ideal for operation from a single supply.

It operates from +5V to +15V and features rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input VOS, drift, and broadband noise as well as voltage gain into realistic loads (2 k and 600) are all equal to or better than widely accepted bipolar equivalents. This chip is built with National's advanced Double-Poly Silicon-Gate CMOS process. See the LMC660 datasheet for a Quad CMOS operational amplifier with these same features.

Simulation ModelSimulation Model

Specifications:

  • Amplifier Type: CMOS
  • Bandwidth: 1.4 MHz
  • Base Number: 662
  • Device Marking: LMC662CN
  • Gain Bandwidth: 1.4 MHz
  • I/O Type: Rail-Rail Outputs
  • IC Generic Number: 662
  • Input Offset Voltage Max: 6.3 mV
  • Logic Function Number: 662
  • Mounting Type: Through Hole
  • Number of Amplifiers: 2
  • Number of Pins: 8
  • Op Amp Type: Low Input Bias
  • Operating Temperature Range: Commercial
  • Operational Amplifier Features: CMOS
  • Package / Case: DIP
  • SVHC: No SVHC (15-Dec-2010)
  • Slew Rate: 1.1 V/µs
  • Supply Voltage + Nom: 5 V
  • Supply Voltage Range: 4.75 V to 15.5 V

RoHS: Yes

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