Datasheet 20MT120UFPBF - Vishay IGBT MODULE, FULL BRIDGE — Datenblatt

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Manufacturer: Vishay

Description: IGBT MODULE, FULL BRIDGE

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Docket:
5/
I27124 rev.

D 02/03
20MT120UF
"FULL-BRIDGE" IGBT MTP
Features

Specifications:

• Collector Emitter Voltage V(br)ceo: 1.2 kV
• Collector Emitter Voltage Vces: 3.59 V
• Current Ic @ Vce Sat: 20 A
• Current Ic Continuous a Max: 40 A
• Package / Case: MTP
• Power Dissipation Pd: 240 W
• Pulsed Current Icm: 100 A
• Transistor Case Style: MTP
• Transistor Polarity: N Channel
• Transistor Type:

RoHS: Yes