Datasheet SEMIX402GB066HDS - Semikron IGBT MODULE, 2X600V — Datenblatt

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Manufacturer: Semikron

Description: IGBT MODULE, 2X600V

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Docket:
SEMiX 402GB066HDs
Absolute Maximum Ratings Symbol Conditions IGBT Values Units
SEMiX®2s Trench IGBT Modules
SEMiX 402GB066HDs SEMiX 402GAL066HDs SEMiX 402GAR066HDs Preliminary Data Module Inverse Diode
Features

Specifications:

• Av Current Ic: 530 A
• Collector Emitter Voltage V(br)ceo: 1 V
• Collector Emitter Voltage Vces: 1.9 V
• Current Ic Continuous a Max: 530 A
• DC Collector Current: 509 A
• Forward Surge Current Ifsm Max: 1800 A
• Mounting Type: Screw
• Number of Pins: 14
• Operating Temperature Range: -40°C to +175°C
• Package / Case: SEMiX 2s
• Pulsed Current Icm: 800 A
• Repetitive Reverse Voltage Vrrm Max: 1600 V
• Rise Time: 125 ns
• Transistor Case Style: SEMiX 2s
• Transistor Polarity: N Channel
• Transistor Type:
• Voltage Vces: 600 V

RoHS: Yes