Datasheet SEMIX252GB126HDS - Semikron IGBT MODULE, 2X1200V — Datenblatt

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Manufacturer: Semikron

Description: IGBT MODULE, 2X1200V

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Docket:
SEMiX 252GB126HDs
Absolute Maximum Ratings Symbol Conditions IGBT Values Units
SEMiX®2s Trench IGBT Modules
SEMiX 252GB126HDs Freewheeling Diode Preliminary Data Module Inverse Diode
Features

Specifications:

• Av Current Ic: 270 A
• Collector Emitter Voltage V(br)ceo: 1.2 V
• Collector Emitter Voltage Vces: 2.15 V
• Current Ic Continuous a Max: 270 A
• DC Collector Current: 270 A
• Forward Surge Current Ifsm Max: 1000 A
• Module Configuration: Dual
• Mounting Type: Screw
• Number of Pins: 14
• Operating Temperature Range: -40°C to +150°C
• Package / Case: SEMiX 2s
• Pulsed Current Icm: 400 A
• Repetitive Reverse Voltage Vrrm Max: 1.2 kV
• Rise Time: 45 ns
• Transistor Case Style: SEMiX 2s
• Transistor Polarity: N Channel
• Transistor Type:
• Voltage Vces: 1.2 kV

RoHS: Yes