Datasheet GA100ABPL12 - Genesic Semiconductor IGBT, 1200 V, 100 A, MODULE — Datenblatt

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Manufacturer: Genesic Semiconductor

Description: IGBT, 1200 V, 100 A, MODULE

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Docket:
Parameter IGBT Collector-Emitter Voltage DC-Collector Current Gate Emitter Peak Voltage Operating Temperature Storage Temperature Insulation Test Voltage Free-wheeling diode DC-Forward Current Repetitive Peak Forward Current Forward Surge Current Thermal Properties Th.

Resistance Junction to Case
Th. Resistance Case to Heat Sink
Symbol VCES ICM VGES Tvj Tstg VISOL IF IFM IFSM RthJC RthCS
Conditions
Values 1200 150 (100) ±20 -40 to +125 -40 to +125 2500 150 (100) tP= 1ms 300 (190) 1000 0.17 0.25 Values

Specifications:

• Collector Emitter Voltage V(br)ceo: 1.2 kV
• Collector Emitter Voltage Vces: 1200 V
• DC Collector Current: 100 A
• Module Configuration: Dual
• Number of Pins: 7
• Operating Temperature Range: -40°C to +125°C
• Transistor Case Style: Module
• Transistor Polarity: N Channel